s mhop microelectronics c orp. a stu/d35l01a symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 100v 35a 20 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw may,27,2010 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.5 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 240 35 100 50 green product 28 32
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 20 g fs s c iss 3300 pf c oss 243 pf c rss 160 pf q g 82 nc 80 82 32 t d(on) 44 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =17a v ds =10v , i d =17a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 25 c f=1.0mhz c stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 2 v sd nc q gs nc q gd 8.5 16 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =17a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =7a 0.78 1.3 v notes v ds =50v,i d =17a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 2 2.9 4 23
stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 60 50 40 30 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 30 24 18 12 6 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 60 50 40 30 20 10 1 12 24 36 60 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =17a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 10 v gs =10v 48 1 v gs =5v v gs =6v v gs =7v v gs =8v
stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 100 10 1 0.3 r ds ( on) li m i t v gs =10v single pulse t a =25 c 90 75 60 45 30 15 0 24 68 10 0 125 c 75 c 25 c i d =17a 20.0 10.0 1.0 0 0.2 0.4 0.6 0.8 1.0 5.0 25 c 125 c 75 c ciss coss crss 4200 3500 2800 2100 1400 700 0 10 15 20 25 30 0 5 110 100 1 10 100 500 vds=50v,id=1a vgs=10v 60 6 td(on) tr td(off ) tf 10 8 6 4 2 0 0714 21 28 35 42 49 56 v ds =50v i d =17a dc 10ms 1ms 100 us 10us
t p v (br )dss i as figure 13b. stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v
stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 7 to-252 0.127 0.633 0.889 1.092 5.969 9.601 0.460 0.560 0.889 1.143 l4 0.508 2.286 bsc b1 b2 6.400 6.731 b l3 1.313 1.651 l1 a1 2.666 3.174 l2 5.515 5.415 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.184 2.388 max min 0.000 0.666 5.207 5.461 c 0.460 0.584 d 6.223 d1 e e 10.286 l h 1.016 1 0 7 8 ref. max min millimeters inches 0.086 0.094 0.000 0.005 0.025 0.035 0.026 0.043 0.205 0.215 0.018 0.023 0.235 0.245 0.213 0.217 0.252 0.265 0.090 bsc 0.378 0.405 0.052 0.065 0.105 0.125 0.018 0.022 0.035 0.045 0.020 0.040 0 7 8 ref. symbols e1 4.902 5.004 0.193 0.197
stu/d35l01a ver 1.0 www.samhop.com.tw may,27,2010 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a " to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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